Device for adjusting position of chamber and plasma process chamber including the same for semiconductor manufacturing

ABSTRACT

A device for a plasma processing chamber includes a base, an upper portion attached to the base and extending transverse to the base, and one or more first through holes defined in the base. The one or more first through holes correspond to one or more openings defined in the plasma processing chamber for attaching the device. The device further includes a second through hole defined in the upper portion, and a gauge located in the second through hole, the gauge configured for recording a position of the plasma processing chamber and a shift in the position of the plasma processing chamber.

CROSS REFERENCE TO RELATED APPLICATION

This application is a divisional application of and claims priorityunder 35 U.S.C. § 120 to U.S. non-provisional application Ser. No.17/358,808 filed Jun. 25, 2021, the entire contents of which areincorporated herein by reference.

BACKGROUND

Physical vapor deposition (PVD), or sputtering, is a process used in thefabrication of electronic devices. PVD is a plasma process performed ina vacuum chamber where a negatively biased target is exposed to a plasmaof an inert gas having relatively heavy atoms (e.g., argon (Ar)) or agas mixture comprising such inert gas. Bombardment of the target by ionsof the inert gas results in ejection of atoms of the target material.The ejected atoms accumulate as a deposited film on a substrate placedon a substrate support pedestal disposed within the chamber.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detaileddescription when read with the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale and are used for illustration purposesonly. In fact, the dimensions of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIG. 1 illustrates a semiconductor processing chamber.

FIG. 2A illustrates a wafer map of the surface of a semiconductorsubstrate before positional shift of the RF coil.

FIG. 2B illustrates the wafer map of the surface of the semiconductorsubstrate after positional shift.

FIG. 3A is a front view of the chamber of FIG. 1 and jigs for installingon an outer surface thereof, according to embodiments of the disclosure.

FIG. 3B is a schematic plan view of the chamber of FIG. 1 including thejigs attached thereto, according to embodiments of the disclosure.

FIG. 3C is a side view of the chamber of FIG. 1 with the jigs attachedthereto, according to embodiments of the disclosure.

FIG. 4A is a perspective view of a jig of FIGS. 3A-3C. FIG. 4B is afront view of the jig in FIG. 4A. FIG. 4C is a side view of the jig inFIG. 4A. FIG. 4D is a plan view of the jig in FIG. 4A.

FIG. 5A is a perspective view of a jig in FIGS. 3A-3C. FIG. 5B is afront view of the jig in FIG. 5A. FIG. 5C is a side view of the jig inFIG. 5A. FIG. 5D is a plan view of the jig in FIG. 5A.

FIG. 6 illustrates the screws in FIG. 3A-3C coupled to a motor or anactuator for rotating the screws, according to embodiments of thedisclosure.

FIGS. 7A and 7B show a controller according to embodiments of thedisclosure.

FIG. 8 is a flowchart of a method of determining change in position of aresonator housing, according to embodiments of the disclosure.

DETAILED DESCRIPTION

It is to be understood that the following disclosure provides manydifferent embodiments, or examples, for implementing different featuresof the disclosure. Specific embodiments or examples of components andarrangements are described below to simplify the present disclosure.These are, of course, merely examples and are not intended to belimiting. For example, dimensions of elements are not limited to thedisclosed range or values, but may depend upon process conditions and/ordesired properties of the device. Moreover, the formation of a firstfeature over or on a second feature in the description that follows mayinclude embodiments in which the first and second features are formed indirect contact, and may also include embodiments in which additionalfeatures may be formed interposing the first and second features, suchthat the first and second features may not be in direct contact. Variousfeatures may be arbitrarily drawn in different scales for simplicity andclarity.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The device may be otherwise oriented (rotated 90 degrees orat other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly. In addition, the term“made of” may mean either “comprising” or “consisting of.”

Embodiments of the disclosure generally relate to pre-clean chambers ofa plasma processing apparatus, such as a physical vapor deposition (PVD)apparatus, and methods used to correct the position of the RF resonatorof the pre-clean chamber. More particularly, embodiments of thedisclosure are directed to one or more jigs (or fixtures) that areconfigured to record an original position of the RF resonator (coil) andreposition the pre-clean RF coil to the original position after a shiftin the position of the resonator housing.

In the fabrication of semiconductor integrated circuits, metal conductorlines are used to interconnect the multiple components in devicecircuits on a semiconductor substrate. A general process used in thedeposition of metal conductor line patterns on semiconductor substratesincludes deposition of a conducting layer over the semiconductorsubstrate, formation of a photoresist mask or other hard masks made of,such as titanium oxide or silicon oxide, in the form of the desiredmetal conductor line pattern, using lithographic techniques, subjectingthe semiconductor substrate to a dry etching process to remove theconducting layer from the areas not covered by the mask, thereby leavingthe metal layer in the form of the masked conductor line pattern, andremoving the mask layer typically using reactive plasma, therebyexposing the top surface of the metal conductor lines. Typically,multiple alternating layers of electrically conductive and insulativematerials are sequentially deposited on the semiconductor substrate, andconductive layers at different levels over the semiconductor substratemay be electrically connected to each other by etching vias, oropenings, in the insulative layers and filling the vias using aluminum,tungsten or other metal to establish electrical connection between theconductive layers. Deposition of conductive layers over thesemiconductor substrate can be carried out using physical vapordeposition (PVD). Physical vapor deposition (PVD) can includeevaporation, e-beam evaporation, plasma spray deposition, andsputtering. In sputtering, semiconductor substrates are produced by thedeposition or “sputtering” of a metallic layer on the surface of asemiconductor substrate.

Physical vapor deposition (PVD) systems typically include a first airlock loading chamber in which cassettes containing a plurality ofsemiconductor substrates to be processed are placed and from which thesemiconductor substrates are transported to a second vacuum chamber (ortransportation chamber) using a conveyor or a wafer handling robot.Subsequently, the semiconductor substrates are placed on a rotatingtable or stage in the plasma deposition chamber. After the depositionprocess, the processed semiconductor substrates are again transportedback through the transportation chamber, to the loading chamber and thenback into the cassette for further handling or processing.

Prior to physical vapor deposition, the semiconductor substrates undergoa pre-clean process in a pre-clean chamber to remove any chemicalresidue or oxide, which may be formed when the semiconductor substrateis exposed to the atmosphere. Any chemical residue or oxide, whichremains on the semiconductor substrate can act as a dielectric shieldand impede the PVD film from uniformly adhering to the surface. Thepre-clean chamber applies a light, non-selective, non-reactive plasmaetch to the semiconductor substrate to remove chemical residuesincluding metal oxide or metal compounds, such as Cu₂O, CuO, Cu(OH)₂,CuCO₃ and CuF_(x) remaining on conductive patterns formed over thesemiconductor substrate surface. It also removes a thin layer of oxideformed on the surface of the conductive patterns formed over thesemiconductor substrate when the semiconductor substrate is exposed tothe atmosphere, and exposes a fresh metal surface prior to themetallization step.

Transferring the semiconductor substrates between the pre-clean chamberand other components of the semiconductor substrate processing system,for instance, the physical vapor deposition (PVD) chamber may causevibration, which in turn causes a shift in the position of an RF coil ofthe pre-clean chamber. In some embodiments, a pre-clean process usingthe pre-clean chamber causes the shift. Maintenance operations of thepre-clean chamber may also cause a positional shift in the RF coil. Theshift in the RF coil may cause non-uniform etching of the semiconductorsubstrate, which may cause errors or defects in other semiconductorprocessing operations.

Embodiments of the disclosure are directed to jigs (or fixtures) thatare configured to record the original position of the RF coil and tore-position the RF coil to its original position prior to shifting.

Although embodiments of the disclosure are discussed with reference topre-clean chambers, embodiments are not limited thereto. Embodiments ofthe disclosure are equally applicable to other processing chambers suchas plasma deposition chambers wherein it is required to correctpositional shifts of any part of the processing chambers, withoutdeparting from the scope of the disclosure.

FIG. 1 illustrates a semiconductor processing chamber including a base102 and an outer wall 104 that includes a port for receiving asemiconductor substrate W in chamber 100. For the purposes discussionherein, it is assumed that the semiconductor processing chamber is apre-clean chamber 100. Once introduced into chamber 100, semiconductorsubstrate W is transferred to a substrate lift 106, which is comprisedof a pedestal 108, an insulator 110, an insulator base 118, a shaft 120and a bellows assembly 112. The semiconductor substrate W is seated uponpedestal 108 comprising an RF-biased, disk-shaped platform made fromaluminum, titanium or other non-reactive metal. The pedestal 108 issupported and insulated by insulator 110.

The insulator 110 is a one-piece insulator, including a non-reactiveinsulative material such as ceramic or quartz. The insulator 110insulates the sides and bottom of pedestal 108 and collimates the RFpower to the top surface of pedestal 108 and, hence, throughsemiconductor substrate W. The insulator 110 is supported by insulatorbase 118. The shaft 120 supports pedestal 108, insulator 110 andinsulator base 118 and moves semiconductor substrate W verticallybetween a release position, where semiconductor substrate W isintroduced from and is removed from the chamber 100, and a processingposition, where semiconductor substrate W is maintained during theetching process. The bellows assembly 112 surrounds shaft 120 andisolates shaft 120 when chamber 100 is under vacuum. The chamber cover116 covers chamber 100 and seals chamber 100 during semiconductorsubstrate processing.

The substrate support including the pedestal 108, the insulator 110, theinsulator base 118, the shaft 120, and the bellows assembly 112functions as an RF cathode connected to an RF power supply 124. Thechamber 100 also includes one or more deposition shields, cover rings orthe like circumscribing various chamber components to prevent unwantedreaction between such components and ionized process material.

To create a desired plasma for processing the semiconductor substrate Wan RF coil 128 is provided in the chamber 100. The coil 128 is disposedwithin a resonator housing 130 disposed above the chamber cover 116 (orlid). The coil 128 is vertically aligned with the outer walls 104 of thechamber 100 and is powered by an RF coil power source 132.

During pre-clean processing, RF power is supplied to chamber 100. Gasinlet 114 introduces argon gas or other appropriate gases into thechamber for the pre-clean etching. A plasma 136 is created in theprocess cavity 107 when the RF coil 128 inductively couples power fromRF coil power source 132 into the process gas in the chamber 100. RFpower is then supplied to chamber 100, causing high voltage and highcurrent to strike an argon plasma in the chamber. When the RF power issupplied to chamber 100, the bottom surface of chamber cover 116 acts asan anode and substrate support acts as a cathode. Positively chargedargon ions are attracted to the negatively charged substrate support.These ions bombard the semiconductor substrate W on pedestal 108 andetch the surface thereof. To establish and maintain the necessaryenvironmental conditions in the chamber 100, a pressure control device138 is connected to the chamber 100. The pressure control device 138 isfor example a turbo pump or other similar pump capable of establishingnear vacuum conditions (i.e., chamber pressure in the mTorr range).

During the etch process, oxide and other particulates are released fromthe semiconductor substrate and can be deposited on the insulator 110and other components in the chamber 100. This poses a problem as theseparticulates can be dislodged during later processes and can adhere tothe surface of other semiconductor substrates, thus reducing deviceperformance. Consequently, it becomes necessary to clean and resurfaceinsulator 110 between uses. However, these clean cleaning operations cancause shift the position of the resonator housing 130 including the RFcoil 128 (generally indicated by the arrows S).

The chamber 100 is controlled by a system controller 190 thatfacilitates the control and automation of the processing chamber 100 andtypically includes a central processing unit (CPU), memory, and supportcircuits (or I/O). The CPU may be one of any form of computer processorsthat are used in industrial settings for controlling various systemfunctions, substrate movement, chamber processes, and support hardware(e.g., sensors, robots, motors, etc.), and monitor the processes (e.g.,substrate support temperature, power supply variables, chamber processtime, I/O signals, etc.). The memory is connected to the CPU, and may beone or more of a readily available memory, such as random access memory(RAM), read only memory (ROM), floppy disk, hard disk, or any other formof digital storage, local or remote. Software instructions and data canbe coded and stored within the memory for instructing the CPU. Thesupport circuits are also connected to the CPU for supporting theprocessor in a conventional manner. The support circuits include cache,power supplies, clock circuits, input/output circuitry, subsystems, andthe like. A program (or computer instructions) readable by the systemcontroller 190 determines which tasks to be performed on the substrate.The program is software readable by the system controller 190 thatincludes code to perform tasks relating to monitoring, execution andcontrol of the movement and various process recipe tasks and recipesteps being performed in the processing chamber 100. For example, thesystem controller 190 comprises program code that includes a substratepositioning instruction set to operate the substrate support, a gas flowcontrol instruction set to operate flow control valves to set a flow ofsputtering gas to the processing chamber 100, a gas pressure controlinstruction set to operate a throttle valve or gate valve to maintain apressure in the processing chamber 100, a temperature controlinstruction set to control a temperature control system in the substratesupport, and a process monitoring instruction set to monitor the processin the processing chamber 100.

In order to reposition the RF coil 128, an operator has to manuallyrelocate the RF coil 128 to its original position. In order to determinethe original position, an operator refers to a wafer map that depictsthe thickness of films processed by the pre-clean chamber on differentlocations on the surface of the semiconductor substrate. FIG. 2Aillustrates the wafer map 202 of the surface of the semiconductorsubstrate W before positional shift of the RF coil and FIG. 2Billustrates the wafer map 204 of the surface of the semiconductorsubstrate W after positional shift. The wafer maps 202 and 204illustrate the difference in thickness of the film subjected to thepre-clean operation on the surface of the semiconductor substrate W incolor gradient. In some embodiments, a silicon oxide layer is formed ona Si wafer by thermal oxidation or a CVD deposition and thicknesses ofvarious locations of the silicon oxide layer are measured before andafter the pre-clean operation. For instance, in FIGS. 2A and 2B, areas201 indicate a thinner remaining film compared to areas 203 having arelatively thicker film. The operator then manually moves the resonatorhousing 130 including the RF coil in order to reposition the RF coil toits original position and to thereby obtain the wafer map 202 again.However, this manual operation is an iterative process (trial and error)and is error prone since the original position of the resonator housing130 is not readily known. It is desirable to record the originalposition of the resonator housing 130 (and thereby of the coil 128) inaddition to limiting movement of the resonator housing 130.

FIG. 3A is a front view of the chamber 100 and four jigs 302-1, 302-2,302-3, and 302-4 for installing on an outer surface thereof, accordingto embodiments of the disclosure. The four jigs (also referred tofixtures) 302-1, 302-2, 302-3, and 302-4 (collectively referred as jigs302) are designed to be coupled to the chamber 100 via holes 305 in theouter wall 104 of the chamber 100. In some embodiments, the hole 305 arepre-existing holes in the outer wall 104 of the chamber 100. For thepurposes of discussion herein, “pre-existing” refers to holes in thechamber that were formed during the manufacture of the chamber and werenot formed in the chamber for specifically using the jigs. The arrows Pillustrate the direction in which each jig 302 is coupled to the chamber100 using fasteners (e.g., bolts, screws, pins). In view illustrated inFIG. 3A, the holes 305 for the jigs 302-3 and 302-4 are hidden fromview. In other embodiments, special holes for use with the jigs areformed in addition to the pre-existing holes.

Each jig 302 includes a gauge for recording an initial, standard orideal position of the resonator housing 130, which can provide a uniformfilm thickness after the pre-clean operation, and recording the positionof the resonator housing 130 after repositioning (realigning) theresonator housing 130. The gauge can be any type of device that canrecord the position of the housing. In some embodiments, a screw 315 ora threaded bolt or similar is used as a gauge for recording the positionof the housing. The screw 315 can be moved into and out of the jig 302for adjusting a position thereof for contacting with or separating fromthe resonator housing 130.

FIG. 3B is a schematic plan view of the chamber 100 including the jigs302 attached thereto and the screws 315 contacting the resonator housing130, according to embodiments of the disclosure. FIG. 3C is a side viewof the chamber 100 with the jigs 302 attached thereto. The jig 302-4 ishidden from view in FIG. 3C. As illustrated, each jig 302 is attached tothe outer wall 104 and faces the outer surface 131 of the resonatorhousing 130. In some embodiments, and as illustrated, the jigs 302 areangularly separated from each other at regular intervals, e.g., 90°.However, in other embodiments, the jigs 302 are separated from eachother by desired intervals, without departing from the scope of thedisclosure. In some embodiments, three jigs are provided with 120°intervals, and in other embodiments, N jigs are provided with 360°/Ndegree internals (N=2, 3, 4, 5, 6, 7, 8, 9 or 10).

In some embodiments, the jigs 302 have a different structure,configuration and/or arrangement from the pre-existing holes 305. Forexample, the total number of the pre-existing holes is different fromthe total number of the jigs 302. In some embodiments, not allpre-existing holes are used for the jigs.

In some embodiments, all jigs have the same structure. In someembodiments, the structures of the jigs 302-1 and 302-2 are the same butare different from that of the jigs 302-3 and 302-4. In some embodimentsthe number of holes for the jigs 302-1 and 302-2 (pair) is differentfrom the number of holes for the jigs 302-3 and 302-4 (pair). In otherembodiments, the structures of the jigs 302-1 and 302-3 are the same butare different from that of the jigs 302-2 and 302-4.

FIGS. 4A-4D illustrate different views of the jig 302-1 (or 302-2) inFIGS. 3A-3C, according to embodiments of the disclosure. FIG. 4A is aperspective view of the jig 302-1. FIG. 4B is a front view of the jig302-1. FIG. 4C is a side view of the jig 302-1. FIG. 4D is a plan viewof the jig 302-1. Referring to FIGS. 4A-4D, with continued reference toFIGS. 3A-3C, the jig 302-1 has a generally L-shaped body 401 having alower portion or base 403 and an upper portion 405 attached to the base403 and extending transversely to the base 403. In some embodiments, thebase 403 and upper portion 405 are at right angles to each other.However, in other embodiments, the base 403 and upper portion 405 can beat any desired angle with respect to each other. The body 401 isconstructed from a relatively rigid, non-metallic material. Such amaterial is resistant to impacts, and general wear and tear, and canoperate without failure at lower temperatures. Since the material isnon-metallic, interference with RF power is minimized. The material issuch that can be machined relatively easily into the desired shape andsize. In some embodiments, the material may be or include a polymer. Inother embodiments, the material may be or include a metal. In someembodiments, the material includes one or more high-strength and rigidmaterials, such as polyoxymethylene (POM), polyamide (PA), nylon-6(PA6), polyethylene terephthalate (PET), polybutylene terephthalate(PBT), and/or polycarbonate (PC). In certain embodiments, POM is usedbecause it is a high-strength and rigid material, has high stiffness,low friction, and excellent dimensional stability.

As illustrated, the base 403 includes four through holes 411 (althoughmore or less can be present) that correspond to the number of holes 305(FIG. 3A) in the outer wall 104 of the chamber 100 at the location onthe chamber 100 where the jig 302-1 is to be installed. The location ofthe through holes 411 in the base 403 and the spacing between thethrough holes 411 corresponds to the location and spacing of the holes305 (FIG. 3A) at the location on the chamber 100 where the jig 302-1 isto be installed. The through holes 411 are sized and shaped (orotherwise configured) to receive fasteners, such as, screws, forcoupling the jig 302-1 to the chamber 100. In some embodiments, the jigand/or the fasteners are configured such that the fasteners can beremoved and reused, for instance, when replacing a damaged jig. In otherwords, the jig 302-1 is removably coupled to the chamber 100.

The upper portion 405 of the jig 302-1 includes a through hole 413 thatis sized and shaped (or otherwise configured) to receive the screw 315that can be moved into and out of the through hole 413 in order tocontact and separate from the resonator housing 130. The through hole413 is located in a generally central location of the upper portion 405towards the top edge of the upper portion 405. However, the through hole413 can be located at any desired location in the upper portion 405.

In some embodiments, a front face 417 of the base 403 is shaped to matchthe curvature of outer surface of the chamber 100. Thus, when the base403 is contacted with the resonator housing 130, the entire front face417 contact the outer surface 131 of the resonator housing 130.

In some embodiments, the width W of the jig 302-1 is around 78 mm to 80mm and the height H of the jig 302-1 is around 200 mm to around 210 mm.The width W and the height H (in addition to the location and placementof the through holes 411) are dependent on the placement of the holes305 at the location on the chamber 100 where the jig 302-1 is to beinstalled. Thus, in some other embodiments, the width W and the height Hcan be increased (or decreased) depending on the placement of the holes305 and/or the location on the chamber 100.

The shape of the jig 302-1 is not limited to the rectangular shapeillustrated in FIGS. 4A-4C or any particular shape. For instance, insome other embodiments, the base 403 and/or the upper portion 405 canhave rounded corners or can have inclined edges (instead of the straightedge, as illustrated). The jig 302-1 can have any shape and size asrequired by application and design, without departing from the scope ofthe disclosure.

FIGS. 5A-5D illustrate different views of the jig 302-3 (or 302-4) inFIGS. 3A-3C, according to embodiments of the disclosure. FIG. 5A is aperspective view of the jig 302-3. FIG. 5B is a front view of the jig302-3. FIG. 5C is a side view of the jig 302-3. FIG. 5D is a plan viewof the jig 302-3. The jig 302-3 (or 302-4) may be similar in somerespects to the jig 302-1 (or 302-2), and therefore may be bestunderstood with reference thereto where like numerals designate likecomponents not described again in detail.

As illustrated, the base 403 includes two through holes 411 (althoughmore or less can be present) that correspond to the number of holes 305(FIG. 3A) in the outer wall 104 of the chamber 100 at the location onthe chamber 100 where the jig 302-3 is to be installed. The location ofthe through holes 411 in the base 403 and the spacing between thethrough holes 411 corresponds to the location and spacing of the holes305 (FIG. 3A) at the location on the chamber 100 where the jig 302-3 isto be installed. The through holes 411 are sized and shaped (orotherwise configured) to receive fasteners, such as, screws, forcoupling the jig 302-3 to the chamber 100. In some embodiments, the jigand/or the fasteners are configured such that the fasteners can beremoved and reused, for instance, when replacing a damaged jig. In otherwords, the jig 302-3 is removably coupled to the chamber 100.

In some embodiments, the width W of the jig 302-3 is around 45 mm to 50mm and the height H of the jig 302-3 is around 200 mm to around 210 mm.The width W and the height H (in addition to the location and placementof the through holes 411) of the jig 302-3 is dependent on the placementof the holes 305 at the location on the chamber 100 where the jig 302-3is to be installed. Thus, in some other embodiments, the width W and theheight H can be increased (or decreased) depending on the placement ofthe holes 305 and/or the location on the chamber 100.

The shape of the jig 302-1 is not limited to the rectangular shapeillustrated in FIGS. or any particular shape. For instance, in someother embodiments, the base 403 and/or the upper portion 405 can haverounded corners or can have inclined edges (instead of the straightedge, as illustrated). The jig 302-1 can have any shape and size asrequired by application and design, without departing from the scope ofthe disclosure.

Although the jigs 302-1 and 302-2 are discussed to have a similarstructure, and jigs 302-3 and 302-4 are discussed to have a similarstructure, embodiments are not limited thereto. In other embodiments,all jigs 302 have the same structure.

The jigs 302 are attached to the outer wall 104 of the chamber 100 usingfasteners at the appropriate locations on the chamber 100 having theholes 305. Once the jigs 302 are installed, and the resonator housing130 is placed in a correct position, the screws 315 are contacted withthe outer surface 131 of the resonator housing 130. The position of eachscrew 315 is recorded. For instance, a marking is made on each screw ora length of the screw between the outer surface 131 of the resonatorhousing 130 and surface of the jig 302 facing the resonator housing 130is measured to record the initial position of the resonator housing 130.In some embodiment, a collar 135 (FIG. 3C) or sleeve on the screw 315 iscontacted with the jig 302 to record the initial position of theresonator housing 130. In some embodiments, the jig includes a ruler onthe screw for recording the position of the screw.

Pre-clean operations performed in the chamber 100 or maintenanceoperations performed on the resonator housing 130 can cause theresonator housing 130 to shift from its original position. For example,the vibrations in the resonator housing 130 during the pre-cleanoperations or the maintenance operations can cause the resonator housing130 to shift from the initial position. The vibrations and the shiftingof the resonator housing 130 also causes the screws 315 to shift inposition. Since the original position of the screws 315 has already beenrecorded, the position of each screw 315 determines the direction inwhich the resonator housing 130 has shifted. The resonator housing 130is repositioned (realigned) to the initial position by adjusting theposition of one or more screws 315. For instance, depending on shift,the screws 315 can either be moved into or out of the jigs 302 toreposition the resonator housing 130 to its original position. Thescrews 315 determine whether the resonator housing has been repositionedto the initial position. The position of the resonator housing 130 canthus be fine-tuned to ensure correct repositioning of the resonatorhousing 130. With the resonator housing 130 in the correct position, thepre-clean process can be performed with high level of accuracy.

In some embodiments, the screws 315 are adjusted by analyzing the wafermap 204 (FIG. 2B) of the surface of the semiconductor substrate W afterpositional shift. In such embodiments, recording an initial position ofthe screws 315 can be optional. A controller, e.g., controller 190 (FIG.1 ) is programmed with the wafer map 202 (FIG. 2A) of the surface of thesemiconductor substrate W before positional shift of the resonatorhousing 130. After the pre-clean operation on the surface of thesemiconductor substrate W, the controller 190 analyzes the wafer map 204to determine the thickness of the films processed by the pre-cleanchamber on different locations on the surface of the semiconductorsubstrate W.

The screws 315 are connected to motor or actuator that can rotate thescrews 315 for moving the screws 315 into and out of the correspondingjigs. The controller 190 can then control the motor or actuator of oneor more screws 315 based on the wafer map 204 to correct the positionalshift in the resonator housing 130 and relocate the resonator housing130 to its initial position. In other embodiments, the controller 190analyzes the wafer map by considering historical data of etch rates,etch conditions, material to be etched. In some embodiments,relationships between the thickness maps and screw positions areobtained and analyzed, and then based on the analyzed data, thecontroller controls positions of the screw to make the thicknessvariations within a predetermined value. In some embodiments, instead ofthe screws, pistons or bars movable by an actuator (motor or a piezoactuator) are used.

FIG. 6 illustrates the screws 315 coupled to a motor 602 (or anactuator) that can rotate the screws 315 for moving the screws 315 intoand out of the corresponding jigs for contacting or separating from theresonator housing 130. Each motor 602 is controlled by the controller190.

FIG. 7A is a schematic view of a computer system that operates as acontroller (e.g., controller 190) for analyzing wafer maps, controllingthe screws 315, operating the pre-clean chamber 100, and performingother tasks mentioned in the disclosure. The foregoing embodiments maybe realized using computer hardware and computer programs executedthereon. In FIG. 7A, a computer system 700 is provided with a computer701 including an optical disk read only memory (e.g., CD-ROM or DVD-ROM)drive 705 and a magnetic disk drive 706, a keyboard 702, a mouse 703,and a display 704.

FIG. 7B is a diagram showing an internal configuration of the computersystem 700. In FIG. 7B, the computer 701 is provided with, in additionto the optical disk drive 705 and the magnetic disk drive 706, one ormore processors 711, such as a micro processing unit (MPU), a ROM 712 inwhich a program such as a boot up program is stored, a random accessmemory (RAM) 713 that is connected to the MPU 711 and in which a commandof an application program is temporarily stored and a temporary storagearea is provided, a hard disk 714 in which an application program, asystem program, and data are stored, and a bus 715 that connects the MPU711, the ROM 712, and the like. Note that the computer 701 may include anetwork card (not shown) for providing a connection to a LAN.

The program code for causing the computer system 700 to execute theoperations/tasks discussed in the foregoing embodiments may be stored inan optical disk 721 or a magnetic disk 722, which are inserted into theoptical disk drive 705 or the magnetic disk drive 706, and betransmitted to the hard disk 714. Alternatively, the program may betransmitted via a network (not shown) to the computer 701 and stored inthe hard disk 714. At the time of execution, the program is loaded intothe RAM 713. The program may be loaded from the optical disk 721 or themagnetic disk 722, or directly from a network.

An embodiment of the present disclosure is a method 800 of determining achange in a position of a resonator housing according to the flowchartillustrated in FIG. 8 . It is understood that additional operations canbe provided before, during, and after processes discussed in FIG. 8 ,and some of the operations described below can be replaced oreliminated, for additional embodiments of the method. The order of theoperations/processes may be interchangeable and at least some of theoperations/processes may be performed in a different sequence. At leasttwo or more operations/processes may be performed overlapping in time,or almost simultaneously.

The method includes an operation S810 of providing a semiconductorprocessing chamber. The semiconductor processing chamber includes aresonator housing positioned on the semiconductor processing chamber,the resonator housing having a radio frequency (RF) coil disposed withinthe resonator housing, an RF power source connected to the semiconductorprocessing chamber for applying RF power to the RF coil, and a pluralityof jigs disposed about the resonator housing and attached to the chambervia pre-existing holes in the chamber. In operation S820 a firstposition of the resonator housing is recorded using the plurality ofjigs. In operation S830, the semiconductor processing chamber isoperated. In operation S840, a second position of the resonator housingis recorded after operating the semiconductor processing chamber. Inoperation S850, a shift in the position of the resonator housing isdetermined based on a difference in the first position and the secondposition.

Embodiments of the disclosure are directed to recording the originalposition of the resonator housing and repositioning the housing to itsoriginal position. Since the original position has been recorded, theresonator housing can be repositioned to its original position with ahigh level of accuracy and in relatively less time. The correctlypositioned resonator housing ensures a more uniform etching of thesemiconductor substrates, and reduces fabrication errors. By attachingthe jigs via existing holes in the chamber, costs associated withdrilling new holes in the chamber are avoided.

It will be understood that not all advantages have been necessarilydiscussed herein, no particular advantage is required for allembodiments or examples, and other embodiments or examples may offerdifferent advantages.

According to some embodiments of the present disclosure, a device for aplasma processing chamber includes a base, an upper portion attached tothe base and extending transverse to the base, one or more first throughholes defined in the base, the one or more first through holescorresponding to one or more openings defined in the plasma processingchamber for attaching the device, a second through hole defined in theupper portion; and a gauge located in the second through hole, the gaugeconfigured for recording a position of the plasma processing chamber anda shift in the position of the plasma processing chamber. In anembodiment, the gauge is a threaded screw and the second through hole isconfigured for receiving the threaded screw. In an embodiment, locationand placement of the one or more first through holes corresponds tolocation and placement of the one or more openings in the plasmaprocessing chamber. In an embodiment, a shape of a surface of the basecorresponds to a shape of an outer surface of the plasma processingchamber. In an embodiment, the base and the upper portion includepolyoxymethylene (POM). In an embodiment, the base and the upper portionare perpendicular to each other.

According to some embodiments of the present disclosure, a semiconductorsubstrate processing apparatus includes a chamber, a resonator housingpositioned on the chamber, the resonator housing having a radiofrequency (RF) coil disposed within the resonator housing, an RF powersource connected to the chamber for applying RF power to the RF coil;and a plurality of jigs disposed about the resonator housing andattached to the chamber via pre-existing holes in the chamber. Theplurality of jigs are configured for recording a position of theresonator housing. In an embodiment, each jig includes a base, an upperportion attached to the base and extending vertically from the base, oneor more first through holes defined in the base, the one or more firstthrough hole corresponding to the pre-existing holes in the chamber forattaching the jig, a second through hole defined in the upper portion,and a gauge configured for recording the position of the resonatorhousing. In an embodiment, the gauge is a threaded screw that is locatedin the second through hole, the second through hole being configured forthe threaded screw to more into and out of the second through hole. Inan embodiment, each jig and the threaded screw are configured such thata distance between the threaded screw and the resonator housingdecreases when the screw is moved into the second through hole, and thedistance between the threaded screw and the resonator housing increaseswhen the threaded screw is moved out of the second through hole. In anembodiment, location and placement of the one or more first throughholes corresponds to location and placement of the pre-existing holes inthe chamber. In an embodiment, a shape of a surface of the base thatcontacts the resonator housing corresponds to a shape of an outersurface of the resonator housing. In an embodiment, the plurality ofjigs include polyoxymethylene (POM).

According to some embodiments of the present disclosure, a methodincludes providing a semiconductor processing chamber, The semiconductorprocessing chamber includes a resonator housing positioned on thesemiconductor processing chamber, the resonator housing having a radiofrequency (RF) coil disposed within the resonator housing, an RF powersource connected to the semiconductor processing chamber for applying RFpower to the RF coil, and a plurality of jigs disposed about theresonator housing and attached to the semiconductor processing chambervia pre-existing holes in the semiconductor processing chamber. Themethod further includes recording a first position of the resonatorhousing using the plurality of jigs, operating the semiconductorprocessing chamber, recording a second position of the resonator housingafter operating the semiconductor processing chamber, and determining ashift in the position of the resonator housing based on a difference inthe first position and the second position. In an embodiment, each jigincludes a threaded screw, and recording the first position of theresonator housing includes contacting the threaded screws to an outersurface of the resonator housing, and recording a position of eachthreaded screw in the jig. In an embodiment, recording the secondposition of the resonator housing includes recording a change in theposition of the resonator housing from the first position to the secondposition. In an embodiment, the method further includes adjusting one ormore threaded screws to relocate the resonator housing to the firstposition. In an embodiment, each jig of the plurality of jigs includes aplurality of first through holes, and a placement of the plurality offirst through holes corresponds to a placement of the pre-existing holesin the semiconductor processing chamber at a location on thesemiconductor processing chamber where the jig is attached. In anembodiment, wherein each jig includes a base, an upper portion attachedperpendicular to the base, the plurality of first through holes definedin the base, a second through hole defined in the upper portion, and agauge for recording the first position and the second position of theresonator housing. In an embodiment, the plurality of jigs includepolyoxymethylene (POM).

In accordance with another aspect of the disclosure, in a method using asemiconductor processing chamber, the semiconductor processing chamberincludes a resonator housing positioned on the semiconductor processingchamber, the resonator housing having a radio frequency (RF) coildisposed within the resonator housing, an RF power source connected tothe semiconductor processing chamber for applying RF power to the RFcoil, and a plurality of jigs disposed about the resonator housing andattached to the semiconductor processing chamber via pre-existing holesin the semiconductor processing chamber. The method includes recording afirst position of the resonator housing using the plurality of jigs,performing one or more operations using or on the semiconductorprocessing chamber, recording a second position of the resonator housingafter operating the semiconductor processing chamber, and determining ashift in the position of the resonator housing based on a difference inthe first position and the second position. In one or more of theforegoing or following embodiments, the one or more operations includesa maintenance operation. In one or more of the foregoing or followingembodiments, each jig includes a threaded screw, and recording the firstposition of the resonator housing includes contacting the threadedscrews to an outer surface of the resonator housing, and recording aposition of each threaded screw in the jig. In one or more of theforegoing or following embodiments, recording the second position of theresonator housing includes recording a change in the position of theresonator housing from the first position to the second position. In oneor more of the foregoing or following embodiments, the method furtherincludes adjusting one or more threaded screws to relocate the resonatorhousing to the first position. In one or more of the foregoing orfollowing embodiments, the method further includes, after the adjustingperforming a semiconductor manufacturing operation to process asemiconductor wafer. In one or more of the foregoing or followingembodiments, the semiconductor manufacturing operation includes one ormore of a pre-clean operation, a deposition operation or an etchingoperation. In one or more of the foregoing or following embodiments,each jig of the plurality of jigs includes a plurality of first throughholes, and a placement of the plurality of first through holescorresponds to a placement of the pre-existing holes in thesemiconductor processing chamber at a location on the semiconductorprocessing chamber where the jig is attached. In one or more of theforegoing or following embodiments, each jig includes a base, an upperportion attached perpendicular to the base, the plurality of firstthrough holes defined in the base, a second through hole defined in theupper portion, and a gauge for recording the first position and thesecond position of the resonator housing. In one or more of theforegoing or following embodiments, the plurality of jigs includepolyoxymethylene (POM).

In accordance with another aspect of the present disclosure, in a methodfor using a semiconductor processing chamber, the semiconductorprocessing chamber includes a resonator housing positioned on thesemiconductor processing chamber, the resonator housing having a radiofrequency (RF) coil disposed within the resonator housing, an RF powersource connected to the semiconductor processing chamber for applying RFpower to the RF coil, and a plurality of jigs disposed about theresonator housing and attached to the semiconductor processing chambervia pre-existing holes in the semiconductor processing chamber. Themethod includes performing one or more operations using or on thesemiconductor processing chamber, the one or more operations causes ashift of the RF power source, adjusting one or more of the plurality ofjigs so that the RF power source is positioned on the semiconductorprocessing chamber within a predetermined margin, and performing asemiconductor manufacturing process on a semiconductor wafer. In one ormore of the foregoing or following embodiments, the one or moreoperations include a preventive maintenance operation. In one or more ofthe foregoing or following embodiments, the one or more operationscomprise wafer handling. In one or more of the foregoing or followingembodiments, the semiconductor manufacturing operation includes one ormore of a pre-clean operation, a deposition operation or an etchingoperation. In one or more of the foregoing or following embodiments,each of the plurality of jigs comprises a base, an upper portionattached to the base and extending transverse to the base, one or morefirst through holes defined in the base, the one or more first throughholes corresponding to one or more openings defined in the semiconductorprocessing chamber for attaching the device, a second through holedefined in the upper portion, and a gauge located in the second throughhole, the gauge configured for recording a position of the semiconductorprocessing chamber and a shift in the position of the semiconductorprocessing chamber.

The foregoing outlines features of several embodiments or examples sothat those skilled in the art may better understand the aspects of thepresent disclosure. Those skilled in the art should appreciate that theymay readily use the present disclosure as a basis for designing ormodifying other processes and structures for carrying out the samepurposes and/or achieving the same advantages of the embodiments orexamples introduced herein. Those skilled in the art should also realizethat such equivalent constructions do not depart from the spirit andscope of the present disclosure, and that they may make various changes,substitutions, and alterations herein without departing from the spiritand scope of the present disclosure.

What is claimed is:
 1. A device for a plasma processing chamber,comprising: a base; an upper portion attached to the base and extendingtransverse to the base; one or more first through holes defined in thebase, the one or more first through holes corresponding to one or moreopenings defined in the plasma processing chamber for attaching thedevice; a second through hole defined in the upper portion; and a gaugelocated in the second through hole, the gauge configured for recording aposition of the plasma processing chamber and a shift in the position ofthe plasma processing chamber.
 2. The device of claim 1, wherein thegauge is a threaded screw and the second through hole is configured forreceiving the threaded screw.
 3. The device of claim 1, wherein locationand placement of the one or more first through holes corresponds tolocation and placement of the one or more openings in the plasmaprocessing chamber.
 4. The device of claim 1, wherein a shape of asurface of the base corresponds to a shape of an outer surface of theplasma processing chamber.
 5. The device of claim 1, wherein the baseand the upper portion include polyoxymethylene (POM).
 6. The device ofclaim 1, wherein the base and the upper portion are perpendicular toeach other.
 7. A semiconductor substrate processing apparatus,comprising: a chamber; a resonator housing positioned on the chamber,the resonator housing having a radio frequency (RF) coil disposed withinthe resonator housing; an RF power source connected to the chamber forapplying RF power to the RF coil; and a plurality of jigs disposed aboutthe resonator housing and attached to the chamber via pre-existing holesin the chamber, the plurality of jigs being configured for recording aposition of the resonator housing.
 8. The semiconductor substrateprocessing apparatus of claim 7, wherein each jig includes a base; anupper portion attached to the base and extending vertically from thebase; one or more first through holes defined in the base, the one ormore first through hole corresponding to the pre-existing holes in thechamber for attaching the jig; a second through hole defined in theupper portion; and a gauge configured for recording the position of theresonator housing.
 9. The semiconductor substrate processing apparatusof claim 8, wherein the gauge is a threaded screw that is located in thesecond through hole, the second through hole being configured for thethreaded screw to move into and out of the second through hole.
 10. Thesemiconductor substrate processing apparatus of claim 9, wherein eachjig and the threaded screw are configured such that a distance betweenthe threaded screw and the resonator housing decreases when the threadedscrew is moved into the second through hole, and the distance betweenthe threaded screw and the resonator housing increases when the threadedscrew is moved out of the second through hole.
 11. The semiconductorsubstrate processing apparatus of claim 8, wherein location andplacement of the one or more first through holes corresponds to locationand placement of the pre-existing holes in the chamber.
 12. Thesemiconductor substrate processing apparatus of claim 8, wherein a shapeof a surface of the base that contacts the resonator housing correspondsto a shape of an outer surface of the resonator housing.
 13. Thesemiconductor substrate processing apparatus of claim 7, wherein theplurality of jigs include polyoxymethylene (POM).
 14. A system foroperating a semiconductor substrate processing apparatus, comprising: acontroller including a processor and a memory; an actuator operationallycoupled to the controller; a plasma processing chamber; a resonatorhousing positioned on the plasma processing chamber, the resonatorhousing having a radio frequency (RF) coil disposed within the resonatorhousing; an RF power source connected to the plasma processing chamberfor applying RF power to the RF coil; and a plurality of jigs disposedabout the resonator housing and attached to the plasma processingchamber via pre-existing holes in the plasma processing chamber, theplurality of jigs being configured for recording a position of theresonator housing, wherein the controller is programmed to analyze awafer map of a surface of a semiconductor substrate in the plasmaprocessing chamber, and using the wafer map, determine a position of theresonator housing from an initial position; and control the actuator toadjust one or more of the plurality of jigs to adjust the position ofthe resonator housing.
 15. The system of claim 14, wherein the initialposition is the position of the resonator housing prior to operating theplasma processing chamber, and the controller is programmed to analyzethe wafer map to determine a difference between the initial position anda position after operating the plasma processing chamber.
 16. The systemof claim 15, wherein the controller is programmed to control theactuator to adjust the one or more of the plurality of jigs to relocatethe resonator housing to the initial position.
 17. The system of claim14, wherein each jig includes: a base; an upper portion attached to thebase and extending vertically from the base; one or more first throughholes defined in the base, the one or more first through holecorresponding to the pre-existing holes in the plasma processing chamberfor attaching the jig; a second through hole defined in the upperportion; and a threaded screw located in the second through hole forrecording the initial position of the resonator housing, wherein thecontroller is programmed to control the actuator to move the threadedscrew in the second through hole to relocate the resonator housing tothe initial position.
 18. The system of claim 17, wherein each jig andthe threaded screw are configured such that a distance between thethreaded screw and the resonator housing decreases when the threadedscrew is moved into the second through hole, and the distance betweenthe threaded screw and the resonator housing increases when the threadedscrew is moved out of the second through hole.
 19. The system of claim17, wherein location and placement of the one or more first throughholes corresponds to location and placement of the pre-existing holes inthe plasma processing chamber.
 20. The system of claim 14, wherein thecontroller is programmed to resume operation of the plasma processingchamber after the position of the resonator housing is adjusted.